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| Product Description Sirenza Microdevices' SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 1800-2500 MHz cellular, ISM, WLL and Wideband CDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Typical IP3, P1dB, Gain 45 40 35 30 25 20 15 10 5 0 1960 MHz 2140 MHz IP3 P1dB Gain SXT-289 1800-2500 MHz Medium Power GaAs HBT Amplifier Product Features * Patented High Reliability GaAs HBT Technology * High Output 3rd Order Intercept : +42 dBm typ. * at 2450 MHz Surface-Mountable Power Plastic Package Applications * Balanced Amplifier Configuration App. Note (AN-011) 2450 MHz * PCS Systems * WLL, Wideband CDMA Systems * ISM Systems Symbol Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25C Output Power at 1dB Compression f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz V S = 8V RBIAS = 27 Ohms VD = 5 V typ. Units dB m dB m dB m dB dB dB dB m dB m dB m dB dB dB mA C/W Min. Typ. 23.5 23.5 23.0 15.0 15.0 13.8 1.4:1 1.6:1 1.6:1 Max. P 1dB 22.5 S 21 Small signal gain 13.5 16.6 S11 Input VSWR IP3 Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz) 37.5 41.0 40.0 42.0 4.4 4.5 5.4 NF Noise Figure ID Rth, j-l Device Current Thermal Resistance (junction - lead) 85 105 108 120 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101157 Rev G 1 SXT-289 1800-2500 MHz Power Amplifier Note: Tuned for Output IP3 1960 MHz Application Circuit Data, VS=8V, ID=105mA, RBIAS=27 Ohms P1dB vs Frequency 26 25 25C -40C 85C dB Gain vs. Frequency 20 18 16 14 12 10 1930 25C -40C 85C dBm 24 23 22 21 1930 1940 1950 1960 MHz 1970 1980 1990 1940 1950 1960 MHz 1970 1980 1990 Input/Output Return Loss, Isolation vs Frequency 0 -5 -10 -15 -20 -25 -30 -35 -40 1930 T=25oC S11 dBm 42 41 40 39 38 37 1930 Third Order Intercept vs. Frequency (POUT per tone = 11dBm) dB S22 S12 25C -40C 85C 1940 1950 1960 MHz 1970 1980 1990 1940 1950 1960 MHz 1970 1980 1990 Third Order Intercept vs Tone Power Device Current vs. Source Voltage 180 160 140 120 100 80 60 40 20 0 0 2 25C -40C 85C 42 Device Current (mA) 41 dBm 40 39 38 37 0 2 4 6 8 10 12 14 16 POUT per tone (dBm) 25C -40C 85C 4 VS (V) 6 8 10 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101157 Rev G 2 SXT-289 1800-2500 MHz Power Amplifier Note: Tuned for Output IP3 2140 MHz Application Circuit Data, VS=8V, ID=105mA, RBIAS=27 Ohms P1dB vs Frequency Gain vs. Frequency 26 25 dBm 20 25C -40C 85C dB 18 16 14 12 10 2110 25C -40C 85C 24 23 22 21 2110 2120 2130 2140 MHz 2150 2160 2170 2120 2130 2140 MHz 2150 2160 2170 Input/Output Return Loss, Isolation vs Frequency 5 0 -5 -10 -15 -20 -25 -30 -35 2110 T=25oC 45 43 dBm Third Order Intercept vs. Frequency (POUT per tone = 11dBm) dB S11 S22 S12 41 39 37 35 2110 25C -40C 85C 2120 2130 2140 MHz 2150 2160 2170 2120 2130 2140 MHz 2150 2160 2170 Third Order Intercept vs Tone Power Device Current vs. Source Voltage 45 Device Current (mA) 43 dBm 41 39 37 35 0 2 4 6 8 10 12 14 16 POUT per tone (dBm) 25C -40C 85C 180 160 140 120 100 80 60 40 20 0 0 2 25C -40C 85C 4 VS (V) 6 8 10 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101157 Rev G 3 SXT-289 1800-2500 MHz Power Amplifier Note: Tuned for Output IP3 2450 MHz Application Circuit Data, VS=8V, ID=105mA, RBIAS=27 Ohms P1dB vs Frequency Gain vs. Frequency 25C -40C 85C dB 26 25 24 dBm 20 18 16 14 12 10 2400 25C -40C 85C 23 22 21 20 2400 2420 2440 MHz 2460 2480 2500 2420 2440 2460 MHz 2480 2500 Input/Output Return Loss, Isolation vs Frequency 5 0 -5 -10 -15 -20 -25 S12 -30 -35 2400 2420 dB T=25oC S22 dBm 46 44 Third Order Intercept vs. Frequency (POUT per tone = 11dBm) S11 42 40 38 36 2400 25C -40C 85C 2440 MHz 2460 2480 2500 2420 2440 2460 MHz 2480 2500 Third Order Intercept vs Tone Power Device Current vs. Source Voltage 46 Device Current (mA) 44 dBm 42 40 38 36 0 2 25C -40C 85C 180 160 140 120 100 80 60 40 20 0 0 2 25C -40C 85C 4 6 8 10 12 14 16 4 VS (V) 6 8 10 POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101157 Rev G 4 SXT-289 1800-2500 MHz Power Amplifier 1960 MHz Application Circuit Data, VS=8V, ID=105mA, RBIAS=27 Ohms IS-95, 9 Channels Forward 1960 MHz Adjacent Channel Power vs. Channel Output Power -40 -45 -50 -55 -60 -65 -70 -75 -80 12 13 14 15 16 17 Channel Output Power (dBm) Adjacent Channel Power (dBc) +25C +85C -40C IS-95 CDMA at 1960 MHz +17 dBm +14 dBm +11 dBm +8 dBm 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101157 Rev G 5 SXT-289 1800-2500 MHz Power Amplifier The W-CDMA setup is PCCPCH+PSCH+SSCH+CPICH+PICH+64 DPCH 2140 MHz Application Circuit Data, VS=8V, ID=105mA, RBIAS=27 Ohms -40 Adjacent Channel Power (dBc) W-CDMA at 2.14 GHz Adjacent Channel Power vs. Channel Output Power +25C +85C -40C -45 -50 -55 -60 -65 11 12 13 14 15 16 Channel Output Power (dBm) W-CDMA at 2.14 GHz +15 dBm +13 dBm +9 dBm +11 dBm 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101157 Rev G 6 SXT-289 1800-2500 MHz Power Amplifier Voltage Feed Resistor Bias Circuit (for > 7V supply) Note: Circuit Optimized for Output IP3 Vs Rbias C3 R1 Ref. Des. 1960 MHz 39pF 0.5pF 0.1uF 1000pF 18pF 1.0pF 1 15nH 2.7nH 390 Ohm 180 Ohm see chart 13.5 19 8.8 2140 MHz 39pF 0.1uF 1000pF 18pF 1.0pF 2 15nH thru 390 Ohm 180 Ohm see chart * 56.7 2450 MHz 39pF 0.1uF 1000pF 18pF 1.0pF 3 15nH thru 390 Ohm 180 Ohm see chart * 56 * from output pin of SXT289 Toko LL1608-FS series Toko LL1608-FS series Rohm MCR03 series Rohm MCR03 series Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (Ohms) 7V 18 0.5W 8V 27 1.0W 10V 47 1.5W 12V 62 2.0W Part Number Rohm MCH18 series Rohm MCH18 series Matsuo 267M3502104K Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series C4 C5 Power Rating Z=50 , EL3 L2 R2 L1 L3 C6 C1 C2 SXT-289 C 1, C 7 C2 C7 C3 C4 C5 C6 C6 Position Z=50 , EL2 Z=50 , EL1 L1, L2 Schematic L3 R1 R2 Rbias E L1 E L2 E L3 Vs Rbias R1 R2 RFin C3 C4 C5 RFout C1 L1 L3 C2 SXT-289 L2 C7 1 32 C6 SIRENZA MICRODEVICES SOT-89 Eval Board ECB-101499 Rev B Evaluation Board Layout 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101157 Rev G 7 SXT-289 1800-2500 MHz Power Amplifier Active Current Feedback Bias Circuit (for 5V supply) Note: Circuit Optimized for Output IP3 Vs = 5V C3 C4 C5 Frequency Small Signal Gain (dB) Output IP3 (dBm) P1dB (dBm) 1960 MHz 2140 MHz 15.3 39.7* 23.8 15.0 39.2* 23.0 2450 MHz 14.6 39.7* 23.7 *Note: IP3 performance degraded due to lower (4.5V) device voltage. R1 2 6 Rbias U1 1 5 3 4 Ref. Des. C 1, C 7 1960 MHz 39pF 0.5pF 0.1uF 1000pF 22pF 1.0pF 1 15nH 220 Ohm 1.8KOhm 750 Ohm 4.3 Ohm UMZ1N 13.5 35.5 2140 MHz 39pF 0.1uF 1000pF 22pF 1.0pF 2 15nH 220 Ohm 1.8KOhm 750 Ohm 4.3 Ohm UMZ1N 49.8 2450 MHz 39pF 0.1uF 1000pF 22pF 1.0pF 3 15nH 220 Ohm 1.8KOhm 750 Ohm 4.3 Ohm UMZ1N 40.9 Part Number Rohm MCH18 series Rohm MCH18 series Matsuo 267M3502104K Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series L1 C7 Z=50 , EL2 C2 C3 C4 C5 R2 R3 C1 C2 Z=50 , EL1 C6 SXT-289 C6 C6 Position L1 R1 Toko LL1608-FS series Rohm MCR03 series Rohm MCR03 series Rohm MCR03 series Rohm MCR03 series Rohm Schematic R2 R3 Rbias U1 E L1 E L2 C3 C4 R1 C5 Rbias U1 1 R2 L1 C1 R3 C2 SXT-289 31 C6 2 C7 Sirenza Microdevices ECB-101872 Rev. B SOT-89 Active Bias Eval Board Evaluation Board Layout NOTE: Reference Application Note AN-026 for more information on Active Current Bias Circuit. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101157 Rev G 8 Absolute Maximum Ratings Parameter Max. Supply Current (ID) Max. Device Voltage (VD) Max. Power Dissipation Max. RF Input Power Max. Junction Temp. (TJ) Operating Lead Temp. (TL) Max. Storage Temp. Absolute Limit 200 mA 6.0 V 1500 mW 100 mW +150 C -40 to +85 C +150 C Pin # 1 2 3 4 SXT-289 1800-2500 MHz Power Amplifier Part Number Ordering Information Part Number Devices Per Reel Reel Siz e SXT-289 1000 7" Part Symbolization The part will be symbolized with a "XT2" designator on the top surface of the package. Pin Description Function B a se GND & Emitter Collector B a se P i n Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Collector Pin Description Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth,j-l Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. GND & Emitter Same as Pin 2 Package Dimensions .059.004 .038.002 .036.002 .008 .161.006 .096.006 .041.006 .048.002 .010.002 TYP(2X) XT2 .016REF .118REF .118.003 .059.003 .019 +.003 -.002 .059 .010 .068.004 .034 .016 +.003 -.002 .177.004 .030.004 .105.002 MARKING AREA TOP VIEW DOT DENOTES PIN 1 +3 5 -4 .041REF .117.002 .024.004 .161 REF +.002 .015 -.001 TYP(4X) PCB Pad Layout Recommended Mounting Configuration for Optimum RF and Thermal Performance Ground Plane Plated Thru Holes (0.020" DIA) SXT-289 Machine Screws (Optional) DIMENSIONS ARE IN INCHES [MM] 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101157 Rev G 9 |
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